ABSTRACT: Nickel oxide thin films doped with aluminum have been fabricated using advanced SILAR deposition technique on glass substrates. These films have been characterized using Rutherford backscattering for elemental composition and thickness measurements, UV double beam spectrophotometer 1800 series for optical measurements. Ni2O3:Al thin films have high transmission in the wave length range of 300–1100 nm. The film samples A1 and A2 have average band gap of 3.25eV ± 0.05eV
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