ABSTRACT: BaS: Ce+3-ions matrix thin films were synthesized in doping ranges 2,4,6,8 and 10 at.% onto ultrafine Silicon wafer substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique and reports the structural lattice parameters, nanocrystallite sizes, microstress, strains and dislocation densities in the films. Field Emission Scanning Electron Microscope (FESEM) and XRD- techniques were used in the characterization works......
Keywords: BaS thin films, doping, FESEM, XRD
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