ABSTRACT:This paper demonstrates the application of the Noether's theorem I to the potential energy
Lagrangian due to the oxide voltage in a MOS device. The Lagrange's equations for the force functions have
been developed in terms of the change in kinetic or potential energy or the work done. The force functions
minimize the potential and kinetic energy Lagrangian functions by expressing them as divergences.
Keywords: Forces, Potential Energy, Lagrangian, metal-oxide-semiconductor
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